BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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370 pcs
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370 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TPC8A02 is an N-Channel MOS Type Field Effect Transistor utilizing Ultra-High-Speed U-MOS III technology. This component features a built-in Schottky barrier diode, offering a low forward voltage of 0.6V maximum. It is engineered for high-speed switching performance, with a typical gate charge of 11 nC.
The TPC8A02 boasts a low drain-source ON-resistance of 4.3 mΩ (typical) and a high forward transfer admittance of 40 S (typical). It also exhibits a low leakage current of 100 µA maximum at 30V drain-source voltage. The enhancement mode transistor has a threshold voltage ranging from 1.1 to 2.3 V under specific test conditions.
This MOSFET is suitable for applications such as high-efficiency DC/DC converters, notebook PCs, and portable equipment. Its design incorporates a surface mount package for ease of integration into electronic circuits.
The typical gate charge for the Toshiba TPC8A02 MOSFET is 11 nC.
The typical drain-source ON-resistance of the TPC8A02 is 4.3 mΩ.
The typical forward transfer admittance for the TPC8A02 is 40 S.
The maximum leakage current for the TPC8A02 at 30V is 100 µA.
The threshold voltage range for the TPC8A02 is 1.1 to 2.3 V.
The maximum forward voltage of the built-in Schottky barrier diode is 0.6 V.
The RoHS status of the Toshiba TPC8A02 is RoHS3 Compliant.