| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | 1129+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Toshiba TPC8408,LQ(S is a silicon P-/N-Channel MOSFET designed for applications requiring high-speed switching and low on-resistance. It features a drain-source voltage rating of 40V and supports continuous drain currents of 6.1A for N-channel and 5.3A for P-channel.
Key electrical characteristics include a low Rds(On) of 32mOhm at 3.1A and 10V Vgs, and a gate threshold voltage (Vth) ranging from -0.8 to -2.0V for P-channel and 1.3 to 2.3V for N-channel. The device also exhibits low leakage current, with IDSS at a maximum of -10µA for P-channel and 10µA for N-channel.
Packaged in an 8-SOP (Surface Mount) configuration, the TPC8408,LQ(S is suitable for compact designs. Its small footprint and thin package contribute to efficient board space utilization. The operating temperature range is up to 150°C (TJ), making it suitable for various mobile equipment and motor driver applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40 volts.
The component utilizes an 8-SOP surface mount package with a 3.90 millimeter width.
The maximum channel temperature rating is 150 degrees Celsius.
The N-channel provides 6.1 amperes while the P-channel provides 5.3 amperes continuously.
The typical gate charge is 24 nanocoulombs at a 10 volt gate drive.
The N-channel measures 24 milliohms and the P-channel measures 33 milliohms at ±10 volts.