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TPC8407LQS The Toshiba TPC8407LQS is an N and P-channel MOSFET array with a 30V drain-to-source voltage. It features a logic level gate and is available in a surface mount 8-SOP package.
Mfr Part #:

TPC8407LQS

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8407LQS is an N and P-channel MOSFET array with a 30V drain-to-source voltage. It features a logic level gate and is available in a surface mount 8-SOP package.
✓ Total Stock: 4,163 pcs

TPC8407LQS Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,531 pcs
On Request
2531 pcs On Request 1 On Request On Request 1239+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
1,632 pcs
On Request
1632 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8407LQS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Feature
FET Type
Halogen Free
Mounting Type
Operating Temperature
Package / Case
SVHC Present
Supplier Device Package
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TPC8407LQS Description

Short technical summary and product information.

The Toshiba TPC8407LQS is a MOSFET array comprising both N-channel and P-channel transistors. It is designed for applications requiring a drain-to-source voltage of up to 30V. The continuous drain current is rated at 9A for the N-channel FET and 7.4A for the P-channel FET at 25°C. This device features a logic level gate, making it suitable for low-voltage control applications.

 

The TPC8407LQS has a maximum power dissipation of 450mW and an operating temperature range up to 150°C. The on-resistance is specified as a maximum of 17mOhm at 4.5A and 10V gate-source voltage. The input capacitance (Ciss) is a maximum of 1190pF at 10V drain-source voltage, and the gate charge (Qg) is a maximum of 17nC at 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 100μA.

 

This component is housed in an 8-SOP package and is designed for surface mounting. It is supplied in tape and reel packaging. The product status is listed as obsolete.

TPC8407LQS Quick Information

Product Type: MOSFET Array
Canonical Name: TPC8407LQS N and P-Channel MOSFET Array
Subcategory: Transistors - FETs, MOSFETs - Arrays

TPC8407LQS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

TPC8407LQS Features

  • N and P-channel MOSFET array.
  • 30V drain-to-source voltage rating.
  • Logic level gate drive capability.
  • Surface mount 8-SOP package.
  • Maximum power dissipation of 450mW.

TPC8407LQS Applications

  • Suitable for power switching applications.
  • Ideal for battery powered devices.
  • Used in low voltage motor control.
  • Applicable for load switching circuits.

TPC8407LQS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the package type?

8-SOIC (8-SOP) surface mount package.

What is the maximum operating junction temperature?

150°C.

What is the continuous drain current for N-channel and P-channel?

9A for N-channel, 7.4A for P-channel at 25°C.

What is the on-resistance?

17 mOhm maximum at 4.5A and 10V.

What is the gate threshold voltage?

2.3V maximum at 100µA.

What is the gate charge?

17 nC maximum at 10V.

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