| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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305 pcs
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305 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Toshiba TPC8407 is a versatile MOSFET Array featuring both N-Channel and P-Channel transistors. It is rated for a maximum drain-to-source voltage of 30V. The device offers a continuous drain current of 9A for the N-Channel and 7.4A for the P-Channel at 25°C. Its on-resistance is specified as a maximum of 17mOhm at 4.5A and 10V gate-source voltage.
The TPC8407 has a maximum power dissipation of 450mW and an operating temperature range up to 150°C. It supports logic-level gate operation. The MOSFET array is housed in a surface-mount 8-SOIC package, with the supplier device package specified as 8-SOP. This component is listed as obsolete.
This MOSFET array is suitable for power management applications where space and efficiency are critical. Its complementary N-channel and P-channel configuration allows for flexible circuit designs, such as H-bridge configurations or complementary switching circuits. The surface-mount package facilitates automated assembly processes.
The maximum drain-to-source voltage is 30V.
The N-channel continuous drain current is 9A and the P-channel is 7.4A at 25°C.
The maximum on-resistance is 17mOhm at 4.5A drain current and 10V gate drive.
The TPC8407 is available in an 8-SOIC surface-mount package (8-SOP supplier package).
The maximum operating junction temperature is 150°C.
Yes, the TPC8407 features a logic-level gate.