| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,050 pcs
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1050 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TPC8406 is a silicon P/N-Channel MOS Type transistor featuring Ultra-High-Speed U-MOSIII technology. It is designed for applications such as high-efficiency DC/DC converters, notebook PCs, portable equipment, and CCFL inverters.
Key electrical characteristics include a low drain-source ON-resistance of 24 mΩ (typ.) for the P-Channel and 22 mΩ (typ.) for the N-Channel. The gate charge is also minimized, with 9.7 nC (typ.) for P-Channel and 3.5 nC (typ.) for N-Channel, enabling high-speed switching. The transistor exhibits a high forward transfer admittance, with |Yfs| of 13 S (typ.) for P-Channel and 14 S (typ.) for N-Channel, and low leakage current.
The TPC8406 is housed in a small and thin package, contributing to a small footprint in designs. It operates with a gate threshold voltage ranging from -0.8 to -2.0 V for P-Channel and 1.1 to 2.3 V for N-Channel. Absolute maximum ratings include a drain-source voltage of up to ±40 V and a continuous drain current of ±6.5 A.
Thermal characteristics include a channel-to-ambient thermal resistance as low as 83.3 °C/W under single-device operation. The operating temperature range is from -55°C to 150°C, with a storage temperature range also from -55°C to 150°C.
The typical drain-source ON-resistance for the P-Channel is 24 mΩ.
The typical drain-source ON-resistance for the N-Channel is 22 mΩ.
The typical gate charge for the P-Channel is 9.7 nC.
The typical gate charge for the N-Channel is 3.5 nC.
The maximum channel temperature is 150 °C.
The storage temperature range is -55 to 150 °C.
The RoHS status is RoHS3 Compliant.