| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 2008 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Tape & Reel |
The TPC8405(TE12L.Q.M) from Toshiba is a discrete semiconductor component categorized as a MOSFET Array. This device integrates both N-channel and P-channel MOSFETs, offering versatility in circuit design.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V. The continuous drain current (Id) at 25°C is rated at 6A for one channel and 4.5A for the other. The array exhibits a low on-resistance (Rds On) of 26mOhm at 3A and 10V, and a maximum gate threshold voltage (Vgs(th)) of 2V at 1mA.
With a maximum power dissipation of 450mW, this MOSFET array is designed for operation up to 150°C (TJ). It is suitable for surface mount applications and comes in an 8-SOIC package.
This part is listed as obsolete. Please send an RFQ for pricing and availability.
30V.
6A for the N-channel and 4.5A for the P-channel at 25°C.
26mOhm maximum at 3A, 10V.
2V maximum at 1mA.
27nC maximum at 10V.
Maximum junction temperature of 150°C.
8-SOIC (0.173, 4.40mm Width) with supplier device package 8-SOP (5.5x6.0).