| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,500 pcs
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3500 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
| Category | |
| Manufacturer Name |
The TPC8229-H from Toshiba is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a Drain-Source Voltage of 80V, making it suitable for power switching and amplification circuits.
The MOSFET is housed in a compact SOP8 package, facilitating integration into densely populated circuit boards. Its construction as an N-Channel MOSFET allows for efficient current control in electronic designs.
This part is manufactured by Toshiba Semiconductor and Storage, a known producer of semiconductor devices. The TPC8229-H is part of Toshiba's range of MOSFETs, designed to meet the demands of modern electronic systems.
The Drain-Source Voltage of the TPC8229-H is 80V.
The TPC8229-H MOSFET is supplied in a SOP8 package.
The TPC8229-H is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8229-H is 1 Unlimited.
The TPC8229-H is REACH Unaffected.