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TPC8223-H The Toshiba TPC8223-H is a dual N-channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 9A. It features a low Rds On of 17mOhm at 4.5A, 10V.
Mfr Part #:

TPC8223-H

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8223-H is a dual N-channel MOSFET with a 30V drain-to-source voltage and a continuous drain current of 9A. It features a low Rds On of 17mOhm at 4.5A, 10V.
✓ Total Stock: 332,522 pcs
$ Price Range: $2.81

TPC8223-H Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
301,000 pcs
On Request
301000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
31,522 pcs
On Request
31522 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8223-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
FET Feature
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Technology
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TPC8223-H Description

Short technical summary and product information.

The TPC8223-H from Toshiba is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 9A at 25°C.

 

Key electrical characteristics include a maximum Rds On of 17mOhm when tested at 4.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 100µA. Input capacitance (Ciss) is rated at 1190pF at 10V, and gate charge (Qg) is 17nC at 10V. The device has a maximum power dissipation of 450mW and operates at temperatures up to 150°C.

 

This MOSFET is housed in an 8-SOIC package with a surface mount type. It is supplied in tape and reel packaging, suitable for automated assembly processes. The logic level gate feature makes it compatible with lower voltage control signals.

TPC8223-H Quick Information

Product Type: MOSFET
Canonical Name: TPC8223-H Dual N-Channel MOSFET
Subcategory: Dual N-Channel

TPC8223-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8223-H Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8223-H Features

  • Dual N-Channel MOSFET configuration.
  • 30V drain-to-source voltage rating.
  • 9A continuous drain current capability.
  • Low 17mOhm Rds On at 4.5A, 10V.
  • Surface mount 8-SOIC package.

TPC8223-H Applications

  • Used in DC-DC converter circuits
  • Suitable for battery management systems
  • Ideal for load switching applications
  • Used in motor control drivers
  • Suitable for low-voltage power management

TPC8223-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of TPC8223-H?

The maximum drain-source voltage (Vdss) is 30V.

What package is TPC8223-H available in?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the maximum operating temperature of TPC8223-H?

The maximum junction temperature is 150°C.

How much continuous drain current can TPC8223-H handle?

9A at 25°C.

What is the on-resistance of TPC8223-H?

17 mOhm maximum at 4.5A, 10V Vgs.

Does TPC8223-H have logic level gate?

Yes, it features logic level gate with maximum threshold voltage of 2.3V.

What is the input capacitance of TPC8223-H?

1190 pF at 10V Vds.

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