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TPC8213-H. The Toshiba TPC8213-H is an N-Channel MOSFET designed for surface mount applications. It offers a 60V Drain-Source Voltage and a maximum power dissipation of 1.5W.
Mfr Part #:

TPC8213-H.

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8213-H is an N-Channel MOSFET designed for surface mount applications. It offers a 60V Drain-Source Voltage and a maximum power dissipation of 1.5W.
✓ Total Stock: 33,216 pcs

TPC8213-H. Available from 1 distributor

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Optech Co.,Limited ✓
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33,216 pcs
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33216 pcs On Request 1 On Request On Request 08+ On Request On Request
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TPC8213-H. Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC8213-H. Description

Short technical summary and product information.

The TPC8213-H from Toshiba is an N-Channel MOSFET suitable for surface mount configurations. This component features a maximum Drain-Source Voltage of 60V and a maximum power dissipation of 1.5W. It is housed in an SOP package, making it convenient for integration into compact electronic designs.

 

With a typical Drain-Source On-Resistance of 28mΩ at 10V VGS, and 56mΩ under general conditions, the TPC8213-H offers efficient power handling. The maximum operating temperature is rated at 150°C, ensuring reliability in demanding environments. This MOSFET is a component within the broader category of discrete semiconductor products, specifically single transistors.

 

Its specifications make it a versatile choice for various switching and amplification tasks in electronic circuits. The surface mount package facilitates automated assembly processes, contributing to efficient manufacturing.

 

Key electrical characteristics include its voltage and resistance ratings, which are crucial for power management and signal control applications. The component's thermal performance is also a significant consideration for system design.

TPC8213-H. Quick Information

Product Type: MOSFET
Series: TPC8213
Canonical Name: TPC8213-H N-Channel MOSFET
Subcategory: N-Channel

TPC8213-H. Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8213-H. Features

  • N-Channel MOSFET for surface mount.
  • 60V maximum Drain-Source Voltage.
  • 1.5W maximum power dissipation.
  • SOP package for compact designs.
  • Operates up to 150°C maximum temperature.

TPC8213-H. Applications

  • Suitable for power switching circuits.
  • Used in signal amplification applications.
  • Ideal for compact electronic designs.
  • Component for various electronic assemblies.

TPC8213-H. FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the TPC8213-H?

The maximum Drain-Source Voltage for the TPC8213-H is 60V.

What is the typical Drain-Source On-Resistance at VGS=10V?

The typical Drain-Source On-Resistance at VGS=10V is 28mΩ.

What is the maximum operating temperature for this MOSFET?

The maximum operating temperature for the TPC8213-H is 150°C.

What package type is the TPC8213-H MOSFET supplied in?

The TPC8213-H MOSFET is supplied in an SOP package.

How is the TPC8213-H mounted?

The TPC8213-H is designed for surface mount.

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