| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The Toshiba TPC8213-H is an N-Channel MOSFET suitable for various electronic applications. It is manufactured by Toshiba and comes in an SOP package for surface mounting.
Key electrical specifications include a Drain-Source Voltage of 60V and a Drain-Source Resistance of 56mΩ at 10V. The maximum power dissipation is rated at 1.5W, and the maximum operating temperature is 150°C.
This component is designed for efficient power management and switching applications. Its surface mountable SOP package facilitates integration into compact circuit designs.
The Drain-Source Voltage is 60V.
The Drain-Source Resistance is 56mΩ at 10V.
The maximum power dissipation is 1.5W.
The maximum operating temperature is 150°C.
The TPC8213-H is in an SOP package.
The TPC8213-H is a surface mount device.