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TPC8210 The Toshiba TPC8210 is an N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor designed for notebook PC applications. It offers low on-resistance and high transconductance.
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TPC8210

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8210 is an N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor designed for notebook PC applications. It offers low on-resistance and high transconductance.
✓ Total Stock: 763 pcs

TPC8210 Available from 1 distributor

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Optech Co.,Limited ✓
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763 pcs
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763 pcs On Request 1 On Request On Request 13+ On Request On Request
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TPC8210 Specifications Quick View

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TPC8210 Description

Short technical summary and product information.

The Toshiba TPC8210 is a high-performance N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) suitable for notebook PC and portable equipment applications. It features a low drain-source on-resistance of 11 mΩ (typ.) and a high forward transfer admittance of 13 S (typ.).

 

This device operates with a drain-source voltage of up to 30V and can handle a drain current of 8A. The gate threshold voltage (Vth) ranges from 1.3V to 2.5V at a drain-source voltage of 10V. It also exhibits a low leakage current (IDSS) of 10A maximum at 30V drain-source voltage.

 

The TPC8210 is designed with enhancement mode operation and is part of Toshiba's U MOS III technology. Its specifications make it well-suited for power management and switching applications within compact electronic devices.

TPC8210 Quick Information

Product Type: Field-Effect Transistor
Series: TPC
Canonical Name: Toshiba TPC8210 N-Channel Silicon Metal-oxide Semiconductor FET
Subcategory: N-Channel

TPC8210 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8210 Features

  • Low drain source on-resistance: 11 mΩ typical.
  • High forward transfer admittance: 13 S typical.
  • 30V drain-source voltage rating.
  • 8A maximum drain current.
  • N-Channel Silicon Metal-oxide Semiconductor FET.

TPC8210 Applications

  • Ideal for notebook PC applications.
  • Suitable for portable equipment.
  • Used in power management circuits.
  • Designed for efficient switching.

TPC8210 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical drain-source on-resistance of the TPC8210?

The typical drain-source on-resistance of the TPC8210 is 11 mΩ.

What is the maximum drain current for the TPC8210?

The TPC8210 has a maximum drain current of 8A.

What is the drain-source voltage rating of the TPC8210?

The drain-source voltage rating for the TPC8210 is 30V.

What is the typical forward transfer admittance of the TPC8210?

The typical forward transfer admittance of the TPC8210 is 13 S.

What is the RoHS status of the TPC8210?

The RoHS status of the TPC8210 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TPC8210?

The Moisture Sensitivity Level (MSL) for the TPC8210 is 1 Unlimited.

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