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TPC8208(TE12L,Q,M) The Toshiba TPC8208(TE12L,Q,M) is a 2 N-Channel MOSFET designed for applications requiring low on-resistance and high current handling. It features a 20V drain-source voltage and 5A drain current.
Mfr Part #:

TPC8208(TE12L,Q,M)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8208(TE12L,Q,M) is a 2 N-Channel MOSFET designed for applications requiring low on-resistance and high current handling. It features a 20V drain-source voltage and 5A drain current.
✓ Total Stock: 1,061 pcs
$ Price Range: $1.64

TPC8208(TE12L,Q,M) Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,061 pcs
On Request
1061 pcs On Request 1 On Request On Request 07+NOPB On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8208(TE12L,Q,M) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id
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TPC8208(TE12L,Q,M) Description

Short technical summary and product information.

The TPC8208(TE12L,Q,M) from Toshiba is a silicon N-channel MOS type Field Effect Transistor utilizing U-MOS III technology. It is designed for applications such as Lithium Ion Battery and Notebook PC power management.

 

Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of 5A. The device offers a low drain-source ON resistance of 50mOhm at 2.5A and 4V, and a typical forward transfer admittance of 6.3 S. The gate threshold voltage ranges from 0.5V to 1.2V.

 

This MOSFET is housed in a compact 8-SOIC package with a surface mount type. It operates at a maximum channel temperature of 150°C and has a storage temperature range of -55°C to 150°C. The device is suitable for portable equipment applications due to its small footprint and thin package.

TPC8208(TE12L,Q,M) Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPC8208(TE12L,Q,M) N-Channel MOSFET
Subcategory: N-Channel MOSFET

TPC8208(TE12L,Q,M) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8208(TE12L,Q,M) Estimated Pricing

Qty Low High
1+ $1.64 $1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8208(TE12L,Q,M) Features

  • 2 N-Channel MOSFET configuration.
  • 20V drain-source voltage rating.
  • 5A continuous drain current.
  • Low 50mOhm Rds(on) at 2.5A, 4V.
  • Surface mount 8-SOIC package.

TPC8208(TE12L,Q,M) Applications

  • Ideal for synchronous buck converter designs.
  • Used in battery management system load switches.
  • Suitable for automotive low-voltage DC-DC regulation.
  • Applied in motor driver output stage configurations.
  • Deployed in portable device power distribution networks.

TPC8208(TE12L,Q,M) FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

20V

What package type does this component use?

8-SOP surface mount

What is the maximum operating junction temperature?

150°C

What is the typical drain-source on-resistance?

38mOhm at 2.5A

Is the gate threshold voltage compatible with 5V logic?

Yes, the maximum threshold is 1.2V at 200µA

What is the peak pulsed drain current rating?

20A for pulses up to 10 seconds

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