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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The TPC8208-H from Toshiba is a single MOSFET transistor designed for electronic applications. It features a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 12V. The continuous drain current (ID) is rated at 7.1A.
This MOSFET is housed in an SOP8 package, making it suitable for surface-mount designs. Its electrical characteristics, including a gate threshold voltage (Vth) typically between 0.5V and 1.5V, position it for use in power management and switching applications. The MOSFET technology ensures efficient power control.
This component is part of Toshiba's range of discrete semiconductor products. Its specifications make it a viable option for engineers designing circuits requiring reliable switching and amplification capabilities. The SOP8 package is common in many electronic assemblies, facilitating integration into existing designs.
The drain-source voltage (VDS) of the TPC8208-H is 20V.
The continuous drain current (ID) for the TPC8208-H is 7.1A.
The TPC8208-H MOSFET is supplied in an SOP8 package.
The typical gate threshold voltage (Vth) for the TPC8208-H is between 0.5V and 1.5V.