| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
24,924 pcs
|
24924 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba TPC8208 is an N-Channel MOSFET suitable for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous current rating of 5A. The on-resistance (RDS(on)) is specified at a maximum of 50mΩ.
This MOSFET is housed in a SOIC package, designed for surface mounting. Key electrical characteristics include an input capacitance of 780pF and a rise time of 5ns. The maximum power dissipation is rated at 450mW.
Its specifications make it a component for use in power management circuits and switching applications where a compact, surface-mount solution is required.
20V.
5A.
50mΩ.
450mW.
SOIC.
5ns.
780pF.