| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
270 pcs
|
270 pcs | On Request | 1 | On Request | On Request | 04/05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The Toshiba TPC8207(TE12L) is a silicon N-channel MOS Type (U-MOSIII) Field Effect Transistor. It is designed for applications such as lithium-ion batteries, notebook PCs, and portable equipment.
Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of 6A. The MOSFET features a low drain-source ON resistance of 16 mΩ (typ.) and a high forward transfer admittance of 11 S (typ.). The gate-source threshold voltage (Vth) ranges from 0.5V to 1.2V.
This device is housed in a small and thin 8-SOP package, measuring 5.5x6.0mm, suitable for space-constrained designs. The mounting type is surface mount.
Maximum ratings include a channel temperature of 150°C and a storage temperature range of -55°C to 150°C. The device is also noted as being electrostatic sensitive.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
8-SOIC (0.173", 4.40mm Width) also known as 8-SOP (5.5x6.0).
150°C.
16mOhm typical.