| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
32,166 pcs
|
32166 pcs | On Request | 1 | On Request | On Request | 0341+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPC8206 is an N-Channel MOSFET, manufactured by Toshiba, and categorized under Transistors - FETs, MOSFETs - Single. This component features a drain-source voltage of 60V and can handle a continuous drain current of 7A. Its typical on-resistance is 40mΩ when a gate-source voltage of 10V is applied.
The MOSFET is housed in an SO-8 package, suitable for surface-mount applications. Its specifications make it a viable option for power management and switching circuits where reliable performance is essential.
Key electrical characteristics include a 60V drain-source voltage rating and a 7A continuous drain current. The low on-resistance of 40mΩ at 10V contributes to efficient power transfer and reduced heat generation in operation.
This component is part of Toshiba's range of semiconductor devices. Its N-Channel configuration and specific electrical parameters are designed to meet the demands of modern electronic designs requiring robust and efficient switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 60V.
The continuous drain current is 7A.
The typical on-resistance is 40mΩ at 10V.
The TPC8206 is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.