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25,868 pcs
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25868 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
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The Toshiba TPC8134 is a Silicon P-Channel MOSFET manufactured by Toshiba. This component is designed for surface mount applications and comes in a SOIC package with 8 terminals.
Key electrical specifications include a maximum Drain-Source Voltage of 40V. The on-resistance (RDS(on)) is specified with a maximum of 52mΩ and a typical Drain-Source Resistance of 66mΩ. It also has an input capacitance of 890pF.
Performance characteristics include a typical rise time of 8ns and a fall time of 30ns. The operating temperature range for this MOSFET is from -55°C to 150°C.
This component is suitable for various electronic designs requiring a P-Channel MOSFET with these specific electrical and thermal characteristics.
40V maximum.
Maximum RDS(on) is 52mΩ.
890pF typical.
Rise time 8ns typical, fall time 30ns typical.
-55°C to 150°C.
8-pin SOIC surface mount package.