| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
355 pcs
|
355 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TPC8133,LQ(S is a P-Channel MOSFET designed for power management applications. It features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 9A at 25°C.
Key electrical characteristics include a maximum power dissipation of 1W (Ta) and a low drain-source on-resistance (RDS(ON)) of 11 mΩ typically at VGS = -10V. The threshold voltage (Vth) ranges from -0.8V to -2.0V at a drain current of -0.5mA.
This MOSFET is housed in a compact 8-SOP package suitable for surface mounting. The operating temperature range is up to 150°C (TJ), with a channel-to-ambient thermal resistance of 65.7°C/W when mounted on a glass-epoxy board.
Applications include Lithium-Ion secondary batteries and general power management switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the TPC8133,LQ(S MOSFET is 40V.
The continuous drain current (Id) for the TPC8133,LQ(S MOSFET is 9A at 25°C (Ta).
The maximum power dissipation for the TPC8133,LQ(S MOSFET is 1W at 25°C (Ta).
The typical drain-source on-resistance (RDS(ON)) for the TPC8133,LQ(S MOSFET is 11 mΩ at VGS = -10V.
The operating temperature range for the TPC8133,LQ(S MOSFET is up to 150°C (TJ).
The TPC8133,LQ(S MOSFET is supplied in an 8-SOP package suitable for surface mounting.