| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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10,500 pcs
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10500 pcs | On Request | 1 | On Request | On Request | 1104+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC8128 is a Silicon P-Channel MOSFET designed for various electronic applications. This component offers a Drain-Source Voltage of 30V and a low Drain-Source Resistance of 6.9mΩ.
With a maximum power dissipation rating of 1.9W and a maximum operating temperature of 150°C, the TPC8128 is suitable for applications requiring reliable performance under moderate thermal conditions. The device has 8 terminals.
This MOSFET is manufactured by Toshiba and is part of their extensive semiconductor product line. Its specifications make it a potential candidate for switching and amplification circuits where P-channel characteristics are required.
The drain-source voltage is 30V.
The typical drain-source resistance is 6.9mΩ.
The maximum power dissipation is 1.9W.
The maximum operating temperature is 150°C.
The TPC8128 has 8 terminals.