| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 1303+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The TPC8125,LQ is a single MOSFET manufactured by Toshiba, designed for various electronic applications. It features a maximum drain-source voltage of 30V and a continuous drain current of up to 10A.
Key electrical characteristics include a typical on-resistance of 10 mΩ and a gate threshold voltage ranging from -0.8V to -2.0V. The device also exhibits a low leakage current of -10 μA maximum at -30V drain-source voltage.
This MOSFET is housed in a compact SOP-8 package, suitable for surface mount applications. Its design prioritizes a small footprint and low on-resistance, making it a viable option for power management circuits where space and efficiency are critical.
While specific operating temperature and power dissipation details are not provided, the TPC8125,LQ is intended for general-purpose switching and amplification tasks within its specified voltage and current limits.
30V.
10A.
10mΩ typical.
-0.8V to -2.0V (VDS=-10V, ID=-0.5mA).
SOP-8 surface mount package.
-10μA at VDS=-30V.