| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Toshiba TPC8122 is a Silicon P-Channel MOSFET designed for various electronic applications. This component is manufactured by Toshiba and comes in a SOP package suitable for Surface Mount Device (SMD) mounting.
Key electrical and thermal specifications include a drain-source voltage of -30V, a minimum breakdown voltage of 30V, and a maximum power dissipation of 1.9W. The threshold voltage is rated at -800mV, with a typical drain-source resistance of 4.2mΩ at 10V. The maximum operating temperature for this MOSFET is 150°C.
With 8 terminals, the TPC8122 offers a robust solution for power management and switching circuits. Its specifications make it suitable for applications requiring efficient P-channel MOSFET performance in a compact SMD form factor.
The TPC8122 is supplied in a SOP package.
The maximum drain-source voltage is -30V.
The TPC8122 can operate up to a maximum temperature of 150°C.
The maximum power dissipation is 1.9W.