TPC8121 The TPC8121 is a dual N-channel MOSFET from Toshiba, part of the SuperMESH™ series. It offers a high voltage rating of 450V and a continuous drain current of 0.4A.
Mfr Part #:

TPC8121

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The TPC8121 is a dual N-channel MOSFET from Toshiba, part of the SuperMESH™ series. It offers a high voltage rating of 450V and a continuous drain current of 0.4A.
✓ Total Stock: 238,411 pcs
$ Price Range: $2.81

TPC8121 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,889 pcs
200889 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
31,522 pcs
31522 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 10+ On Request On Request

TPC8121 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Drain to Source Voltage (Vdss)
Failure Rate
Mounting Type
Operating Temperature
Rds On (Max) @ Id, Vgs
Technology

TPC8121 Description

Short technical summary and product information.

The Toshiba TPC8121 is a dual N-channel MOSFET designed for medium-power switching applications. It belongs to the SuperMESH™ series and features a high breakdown voltage of 450V.

 

Key electrical specifications include a continuous drain current of 0.4A at 25°C and a maximum on-resistance of 4.5 Ohms at 500mA and 10V. The gate threshold voltage is a maximum of 3.7V at 250µA, with a maximum gate charge of 10nC at 10V. Input capacitance is rated at a maximum of 160pF at 25V.

 

This MOSFET has a maximum power dissipation of 1.6W and can operate at junction temperatures up to 150°C. It is housed in a compact 8-SOIC package suitable for surface mounting.

 

The dual N-channel configuration provides flexibility for low-power switching and load control scenarios. The device structure is optimized for thermal efficiency and minimal parasitic elements, contributing to overall system efficiency.

TPC8121 Quick Information

Product Type: MOSFET
Series: SuperMESH™
Canonical Name: TPC8121 Dual N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TPC8121 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8121 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8121 Features

  • Dual N-channel MOSFET configuration.
  • High 450V drain-to-source voltage.
  • Low 4.5 Ohm maximum on-resistance.
  • Compact 8-SOIC surface-mount package.
  • Operates up to 150°C junction temperature.

TPC8121 Applications

  • Suitable for medium-power switching.
  • Used in low-power load control.
  • Efficient for compact designs.
  • Power-sensitive applications.

TPC8121 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the TPC8121?

The maximum drain-to-source voltage (Vdss) for the TPC8121 is 450V.

What is the continuous drain current of the TPC8121 at 25°C?

The continuous drain current (Id) at 25°C for the TPC8121 is 0.4A.

What is the maximum on-resistance for the TPC8121?

The maximum on-resistance (Rds On) for the TPC8121 is 4.5 Ohm at 500mA and 10V.

What is the gate threshold voltage of the TPC8121?

The maximum gate threshold voltage (Vgs(th)) for the TPC8121 is 3.7V at 250µA.

What is the maximum gate charge for the TPC8121?

The maximum gate charge (Qg) for the TPC8121 is 10nC at 10V.

What is the input capacitance of the TPC8121?

The maximum input capacitance (Ciss) for the TPC8121 is 160pF at 25V.

What is the maximum operating temperature for the TPC8121?

The TPC8121 can operate at junction temperatures up to 150°C.

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