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3,889 pcs
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3889 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The TPC8117 from VBsemi is a Silicon P Channel MOS Type Field Effect Transistor, part of the U-MOS V series. It is designed for applications such as Lithium Ion Batteries and Notebook PCs.
Key electrical characteristics include a low drain-source ON-resistance (RDS(ON)) of 3.0 mΩ (typical) at VGS = -10V and ID = -9A, and a drain-source breakdown voltage (V DSS) of -30V. The gate threshold voltage (Vth) ranges from -0.8V to -2.0V. It also features a high forward transfer admittance (|Yfs|) of 54 S (typical) and a low leakage current (IDSS) of -10 µA (max).
The device comes in a small and thin package, contributing to a small footprint. Thermal characteristics include a maximum channel temperature of 150°C and thermal resistance values suitable for its power dissipation ratings. The TPC8117 is an electrostatic-sensitive device and requires careful handling.
Absolute maximum ratings specify a drain-source voltage of -30V, drain current of -18A DC and -72A pulse, and drain power dissipation up to 1.9W depending on mounting conditions.
The drain-source voltage rating is -30V maximum.
The package is 2-6J1B surface-mount.
The storage temperature range is -55°C to 150°C, and the maximum channel temperature is 150°C.
The typical on-resistance is 3.0mΩ at VGS=-10V and ID=-9A.
The continuous drain current is -18A maximum.
The gate threshold voltage ranges from -0.8V to -2.0V.
The single pulse avalanche energy is 211mJ maximum.