| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,479 pcs
|
2479 pcs | On Request | 1 | On Request | On Request | 2005+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Toshiba TPC8109(TE12L) is a Silicon P-Channel MOS Type (U-MOS III) Field Effect Transistor. It is designed for applications such as Lithium Ion Battery, Notebook PC, and Portable Equipment.
Key electrical characteristics include a drain-source voltage (Vdss) of 30V, a continuous drain current (Ta) of 10A, and a maximum drain-source ON resistance (Rds On) of 20mOhm at 5A, 10V. The typical forward transfer admittance is 19 S, and the leakage current (IDSS) is a maximum of -10 µA at -30V.
This MOSFET features a small footprint due to its small and thin package, specifically an 8-SOP (5.5x6.0) with a Surface Mount type. The typical weight is 0.080g. The channel temperature has a maximum rating of 150°C, and the storage temperature ranges from -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -30V.
It is available in an 8-SOIC (0.173", 4.40mm Width) surface mount package.
The maximum channel temperature is 150°C and the storage temperature range is -55 to 150°C.
The maximum DC drain current is -10A, and pulse current up to -40A.
The typical on-resistance is 14mOhm at Vgs=10V, Id=5A, with a maximum of 20mOhm.
The maximum gate charge is 45nC at Vgs=10V.
The maximum input capacitance is 2260pF at Vds=10V.