| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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512 pcs
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512 pcs | On Request | 1 | On Request | On Request | 0345+ | On Request | On Request |
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The Toshiba TPC8109 is a P-Channel MOS Type (U-MOS III) Field Effect Transistor. It is designed for use in applications such as Lithium Ion battery systems, notebook PCs, and other portable electronic equipment. The device is characterized by its small and thin package, contributing to a small footprint.
Key electrical characteristics include a low drain-source ON resistance of 14 mΩ (typ.) and a high forward transfer admittance of 19 S (typ.). It also features a low leakage current of -10 µA (max) at -30 VDS. The threshold voltage (Vth) ranges from -0.8 to -2.0 V under specific test conditions.
Absolute maximum ratings specify a drain-source voltage (VDSS) of -30 V and a gate-source voltage (VGSS) of ±20 V. The continuous drain current (ID) is rated at -10 A, with a pulse drain current (IDP) of -40 A. Power dissipation is 1.9 W (Note 2a) or 1.0 W (Note 2b) under specific conditions. Thermal resistance from channel to ambient is 65.8 °C/W (Note 2a).
The TPC8109 is housed in an SOP package and is designed for surface mounting. It operates within a channel temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vds) is -30 V.
The TPC8109 is available in a SOP (Small Outline Package) for surface mount mounting.
The operating temperature range is -55°C to 150°C.
The continuous drain current is -10 A DC.
The typical drain-source on-resistance is 14 mΩ.
The threshold voltage (Vth) is between -0.8 V and -2.0 V.
The maximum power dissipation is 1.9 W (t=10s, Note 2a).