Mfr Part #:

TPC8109

Mfr Name: Toshiba

The Toshiba TPC8109 is a P-Channel MOSFET designed for applications like lithium-ion battery systems and portable equipment. It offers low ON resistance and a small footprint.

✓ Total Stock: 25,651 pcs

TPC8109 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	24,738 pcs On Request	24738 pcs	On Request	1	On Request	On Request	1230+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	913 pcs On Request	913 pcs	On Request	1	On Request	On Request	06+	On Request	On Request

TPC8109 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Toshiba
Current Rating	-10 A
Mounting Type	Surface Mount
Package / Case	SOP
Power Dissipation	1.9 W
Weight	0.080 g (typ.)

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TPC8109 Description

Short technical summary and product information.

The Toshiba TPC8109 is a P-Channel MOSFET utilizing U-MOS III technology, suitable for applications such as lithium-ion battery systems, notebook PCs, and portable equipment. Its design prioritizes a small footprint due to its compact and thin package.

Key electrical characteristics include a low drain-source ON resistance of 14 mΩ (typ.) and a high forward transfer admittance of 19 S (typ.). The device features a maximum drain-source voltage of -30 V and a maximum continuous drain current of -10 A. It also has a low leakage current of -10 µA (max) at -30 V.

The MOSFET operates within a channel temperature range of 150 °C and a storage temperature range of -55 to 150 °C. Thermal resistance from channel to ambient is rated at 65.8 °C/W under specific mounting conditions. The TPC8109 is supplied in an SOP package and is designed for surface mounting.

Absolute maximum ratings include a drain-source voltage of -30 V, gate-source voltage of ±20 V, and a maximum channel temperature of 150 °C. The device is electrostatic-sensitive and requires careful handling.

TPC8109 Quick Information

Product Type: MOSFET

Canonical Name: TPC8109 P-Channel MOSFET

Subcategory: P-Channel

TPC8109 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

TPC8109 Features

P-Channel MOSFET with U-MOS III technology.
Low drain-source ON resistance: 14 mΩ typical.
High forward transfer admittance: 19 S typical.
Small footprint, thin package.
Suitable for battery and portable equipment.

TPC8109 Applications

Ideal for lithium-ion battery applications.
Used in notebook PC designs.
Suitable for portable equipment.
Power management circuits.
Switching applications.

TPC8109 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the TPC8109?

The maximum drain-source voltage is -30V.

What is the continuous drain current rating?

The maximum continuous drain current is -10A.

What is the typical ON resistance?

The typical drain-source ON resistance is 14 mOhm.

What is the gate threshold voltage range?

The gate threshold voltage ranges from -0.8V to -2.0V at VDS = -10V and ID = -1mA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the TPC8109 available in?

The TPC8109 is available in a SOP surface mount package.

What is the maximum power dissipation?

The maximum power dissipation is 1.9W for a 10-second pulse (Note 2a).