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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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The Toshiba TPC8105-H is a P-Channel MOSFET designed for various electronic applications. It offers a breakdown voltage of 30V and a minimum drain-source on-resistance of 60mOhm at a VGS of -10V and ID of -3.5A.
This MOSFET has a maximum power dissipation of 2.4W and can operate at temperatures up to 150°C. It is housed in a SOP package, suitable for surface mounting.
Key electrical characteristics include its P-Channel Metal-Oxide Semiconductor Field-Effect Transistor construction. The component is manufactured by Toshiba and is part of the broader category of discrete semiconductor products, specifically transistors and MOSFETs.
This part is often used in switching and amplification circuits where a P-Channel MOSFET is required. Its specifications make it suitable for moderate power applications. The SOP package facilitates integration into compact designs.
The minimum drain-source breakdown voltage is 30V.
The drain-source on-resistance is 60mOhm minimum at VGS = -10V and ID = -3.5A.
2.4W.
150°C.
SOP package.