| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,178 pcs
|
40178 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
33,524 pcs
|
33524 pcs | On Request | 1 | On Request | On Request | 01+ | On Request | On Request | |
|
175 pcs
|
175 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
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| Technology |
The Toshiba TPC8103 is a P-Channel MOSFET, a type of power semiconductor device used for switching and amplifying electronic signals. This component is manufactured by Toshiba and is suitable for surface mount applications.
Key electrical specifications include a maximum drain-source voltage of 30V and a continuous drain current of 11A at 25°C. The device exhibits a low drain-source on-resistance of 23mΩ, contributing to efficient power handling. Its maximum power dissipation is rated at 2.4W, and it can operate at temperatures up to 150°C.
This MOSFET is constructed using silicon technology and is designed for general-purpose switching and power management applications where a P-Channel device is required. Its specifications make it a suitable choice for designers needing a reliable P-Channel MOSFET with moderate power handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V.
The maximum operating temperature is 150°C.
The package is 8-VDFN Exposed Pad.
The typical drain-source resistance is 0.023Ω.
The maximum continuous drain current is 11A at 25°C.
The maximum power dissipation is 2.4W.
The FET type is P-Channel.