| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
27,585 pcs
|
27585 pcs | On Request | 1 | On Request | On Request | 04+PB | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPC8102 is a P-Channel MOSFET designed for electronic applications requiring efficient power switching. This component features a maximum Drain-Source Voltage of 30V and a maximum power dissipation of 2.4W. Its typical Drain-Source Resistance is rated at 70mΩ, indicating good conductivity.
The MOSFET operates at a maximum temperature of 150°C, ensuring reliability in demanding environments. It is housed in an 8-terminal package, suitable for various mounting configurations.
This P-Channel MOSFET is part of Toshiba's semiconductor offerings, providing a reliable solution for power management circuits. Its specifications make it suitable for use in applications where precise voltage and current control are necessary.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage for the TPC8102 is 30V.
The typical Drain-Source Resistance of the TPC8102 is 70mΩ.
The maximum power dissipation for the TPC8102 is 2.4W.
The maximum operating temperature for the TPC8102 is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8102 is 1 Unlimited.
The REACH status is REACH Unaffected.