| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,860 pcs
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2860 pcs | On Request | 1 | On Request | On Request | 1609+ | On Request | On Request | |
|
363 pcs
|
363 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba TPC8092 is a Silicon N-Channel MOSFET from the U-MOS II series, housed in a small and thin SOP-8 package. This component is engineered for efficiency, featuring a low drain-source on-resistance of 7.6 mΩ (typical) at a VGS of 10 V and a low leakage current of 10 µA (maximum) at a VDS of 30 V.
Key electrical characteristics include a drain-source voltage rating of 30 V and a continuous drain current of 15 A. The MOSFET operates in enhancement mode with a threshold voltage (Vth) ranging from 1.3 to 2.3 V. Its absolute maximum ratings specify a gate-source voltage of ±20 V and a storage temperature range of -55 to 150 °C.
Designed for compact applications, the TPC8092 is suitable for power management switches, notebook PCs, and Lithium-Ion secondary battery systems. The SOP-8 package facilitates surface mounting, contributing to smaller PCB footprints. Thermal characteristics include a channel-to-ambient thermal resistance of 65.7 °C/W when mounted on a glass-epoxy board (a).
30V.
15A continuous, 60A pulsed.
7.6mΩ at VGS=10V.
Channel temperature up to 150°C, storage temperature -55 to 150°C.
SOP-8 surface mount package.
1.3V to 2.3V at VDS=10V, ID=0.2mA.
1.9W (steady state) and 1.0W (10s pulse).