| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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27,185 pcs
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27185 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| SVHC Present | |
| Technology |
The TPC8086-H from VBsemi is a high-performance N-Channel MOSFET designed for applications such as power management switches in notebook PCs and lithium-ion secondary batteries. It is built using Trench technology and offers a small footprint due to its small and thin package.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 30V and a maximum continuous drain current (ID) of 18A. The device exhibits a low drain-source on-resistance (RDS(ON)) of typically 5.0 mΩ at a gate-source voltage (VGS) of 10V. The gate-source threshold voltage (Vth) ranges from 1.3V to 2.3V. The MOSFET operates in enhancement mode.
This component is housed in a SOP8 package, making it suitable for compact designs. Its features like low on-resistance and small package size contribute to efficient power management in portable electronic devices.
The maximum drain-source voltage is 30V.
The maximum continuous drain current is 18A.
The typical on-resistance is 5.0 mΩ at VGS = 10V.
The TPC8086-H is available in an SOP8 package.
The gate-source threshold voltage ranges from 1.3V to 2.3V.
It is an N-Channel Enhancement Mode Trench MOSFET.