TPC8086-H The VBsemi TPC8086-H is an N-Channel MOSFET designed for power management applications. It features a small footprint and low on-resistance.
Mfr Part #:

TPC8086-H

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The VBsemi TPC8086-H is an N-Channel MOSFET designed for power management applications. It features a small footprint and low on-resistance.
Total Stock: 27,185 pcs

TPC8086-H Available from 1 distributor

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TPC8086-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC8086-H Description

Short technical summary and product information.

The TPC8086-H from VBsemi is a high-performance N-Channel MOSFET designed for applications such as power management switches in notebook PCs and lithium-ion secondary batteries. It is built using Trench technology and offers a small footprint due to its small and thin package.

 

Key electrical characteristics include a maximum drain-source voltage (VDS) of 30V and a maximum continuous drain current (ID) of 18A. The device exhibits a low drain-source on-resistance (RDS(ON)) of typically 5.0 mΩ at a gate-source voltage (VGS) of 10V. The gate-source threshold voltage (Vth) ranges from 1.3V to 2.3V. The MOSFET operates in enhancement mode.

 

This component is housed in a SOP8 package, making it suitable for compact designs. Its features like low on-resistance and small package size contribute to efficient power management in portable electronic devices.

TPC8086-H Quick Information

Product Type: MOSFET
Canonical Name: TPC8086-H N-Channel MOSFET
Subcategory: Single

TPC8086-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8086-H Features

  • Low drain-source on-resistance.
  • Small footprint due to thin package.
  • Suitable for lithium-ion battery applications.
  • N-Channel enhancement mode MOSFET.
  • Housed in a compact SOP8 package.

TPC8086-H Applications

  • Suitable for DC-DC converter power stages.
  • Used in load switch and power management.
  • Ideal for battery protection circuits.
  • Applicable in motor drive control circuits.

TPC8086-H FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TPC8086-H?

The maximum drain-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 18A.

What is the typical on-resistance of the TPC8086-H?

The typical on-resistance is 5.0 mΩ at VGS = 10V.

What package is the TPC8086-H available in?

The TPC8086-H is available in an SOP8 package.

What is the gate-source threshold voltage range?

The gate-source threshold voltage ranges from 1.3V to 2.3V.

What type of MOSFET is the TPC8086-H?

It is an N-Channel Enhancement Mode Trench MOSFET.

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