| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,210 pcs
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2210 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | 2026-06-03 08:15:22 |
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The Toshiba TPC8074 is an N-Channel MOSFET belonging to the single FET category. It is manufactured by Toshiba and comes in a SOP8 package.
Key electrical specifications include a drain-source breakdown voltage of 30V and a continuous drain current of 18A. The drain-source on-state resistance is typically 4mΩ at VGS=10V and 5mΩ at VGS=4.5V. The gate threshold voltage is 1.7V, and the maximum gate-source voltage is ±20V.
This MOSFET operates within a maximum temperature of 150°C. Its Trench technology contributes to its performance characteristics. The SOP8 package is suitable for surface-mount applications.
This component is identified as RoHS3 Compliant, with an MSL of 1 Unlimited, and REACH Unaffected. However, these compliance statuses are unverified and should be treated with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 30V (minimum).
The TPC8074 comes in an SOP8 package.
The TPC8074 operates up to a maximum temperature of 150°C.
The typical RDS(on) is 4mΩ at VGS=10V and 5mΩ at VGS=4.5V.
The continuous drain current is 18A.
The nominal gate threshold voltage is 1.7V.
The TPC8074 uses Trench MOSFET technology.