| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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129,143 pcs
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129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The TPC8065-H,LQS from Toshiba is an N-Channel MOSFET belonging to the U-MOSVII-H series. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C.
This MOSFET has a maximum on-resistance (Rds On) of 11.6mOhm at 6.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 200μA. It also has a maximum gate charge (Qg) of 20 nC at 10V and a maximum gate-source voltage of ±20V. The input capacitance (Ciss) is a maximum of 1350 pF at 10V.
With a power dissipation of 1W (Ta) and an operating temperature range of -150°C to 150°C (TJ), this device is suitable for various power management applications. It is housed in an 8-SOP package and is designed for surface mounting.
The TPC8065-H,LQS is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) at 25°C is 13A.
The maximum on-resistance (Rds On) is 11.6mOhm at 6.5A and 10V gate-source voltage.
The operating temperature range is 150°C (TJ).
The TPC8065-H,LQS is supplied in an 8-SOP package designed for surface mounting.
Yes, the TPC8065-H,LQS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.