TPC8065-H,LQ(S The Toshiba TPC8065-H,LQ(S is an N-Channel MOSFET with a 30V drain-to-source voltage and 13A continuous drain current. It is available in an 8-SOIC surface mount package.
Mfr Part #:

TPC8065-H,LQ(S

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8065-H,LQ(S is an N-Channel MOSFET with a 30V drain-to-source voltage and 13A continuous drain current. It is available in an 8-SOIC surface mount package.
✓ Total Stock: 40,000 pcs
$ Price Range: $2.56

TPC8065-H,LQ(S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
40,000 pcs
40000 pcs On Request 1 On Request On Request 14+ On Request On Request

TPC8065-H,LQ(S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPC8065-H,LQ(S Description

Short technical summary and product information.

The Toshiba TPC8065-H,LQ(S is an N-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 11.6mOhm at 6.5A and 10V, a gate threshold voltage (Vgs(th)) of 2.3V at 200µA, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is 1350pF at 10V, and the gate charge (Qg) is 20nC at 10V. The maximum power dissipation is rated at 1W at 25°C.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and operates at temperatures up to 150°C (TJ). It is housed in an 8-SOP package, specifically an 8-SOIC with a width of 3.90mm, suitable for surface mounting.

 

The component is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. It is part of the U-MOSVII-H series.

TPC8065-H,LQ(S Quick Information

Product Type: MOSFET
Series: U-MOSVII-H
Canonical Name: Toshiba TPC8065-H,LQ(S N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TPC8065-H,LQ(S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8065-H,LQ(S Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8065-H,LQ(S Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • 13A continuous drain current.
  • Low on-resistance of 11.6mOhm.
  • Surface mount 8-SOIC package.

TPC8065-H,LQ(S Applications

  • Suitable for power management circuits.
  • Ideal for switching applications.
  • Used in electronic control systems.
  • Component for discrete power solutions.

TPC8065-H,LQ(S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the TPC8065-H,LQ(S MOSFET?

The drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current of the TPC8065-H,LQ(S?

The continuous drain current (Id) is 13A at 25°C.

What is the maximum power dissipation for the TPC8065-H,LQ(S?

The maximum power dissipation is 1W at 25°C.

What is the operating temperature range for the TPC8065-H,LQ(S?

The operating temperature is up to 150°C (TJ).

What package type is the TPC8065-H,LQ(S MOSFET supplied in?

It is supplied in an 8-SOIC (0.154", 3.90mm Width) package.

Is the TPC8065-H,LQ(S RoHS compliant?

Yes, the TPC8065-H,LQ(S is RoHS compliant.

What is the Moisture Sensitivity Level (MSL) for the TPC8065-H,LQ(S?

The Moisture Sensitivity Level is 1 Unlimited.

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