| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,933 pcs
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8933 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Technology |
The Toshiba TPC8065-H.LQ is a single N-Channel MOSFET from the U-MOSVII-H series. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Its on-resistance (Rds On) is a maximum of 11.6mOhm at 6.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 200μA. The maximum gate charge (Qg) is 20nC at 10V, and the maximum input capacitance (Ciss) is 1350pF at 10V.
With a maximum power dissipation of 1W (Ta) and an operating temperature range up to 150°C (TJ), this component is suitable for various power management applications. It is packaged in an 8-SOIC surface mount package, supplied on tape and reel.
The TPC8065-H.LQ is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.
The drain-to-source voltage (Vdss) is 30V.
The continuous drain current (Id) is 13A.
The maximum on-resistance (Rds On) is 11.6mOhm at 6.5A and 10V gate-source voltage.
The operating temperature range is up to 150°C (TJ).
It is supplied in an 8-SOIC package for surface mounting.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.