| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,985 pcs
|
28985 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC8064-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 30V and a minimum drain-source on-resistance of 29mΩ at a gate-source voltage of 10V and drain current of 1A.
With a maximum operating temperature of 150°C, the TPC8064-H is suitable for applications requiring thermal stability. The device has 8 terminals, indicating a specific package type designed for efficient heat dissipation and reliable connections.
This MOSFET is part of Toshiba's range of discrete semiconductor products. Its specifications make it a potential candidate for switching and amplification circuits where performance and reliability are key considerations.
The breakdown voltage of the TPC8064-H MOSFET is 30V.
The minimum drain-source resistance for the TPC8064-H is 29mOhm.
The maximum operating temperature for the TPC8064-H is 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8064-H is 1 Unlimited.