TPC8063-H,LQ The Toshiba TPC8063-H,LQ is an N-Channel MOSFET with a 30V drain-source voltage and 13A continuous drain current. It is supplied in an 8-SOIC surface mount package.
Mfr Part #:

TPC8063-H,LQ

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8063-H,LQ is an N-Channel MOSFET with a 30V drain-source voltage and 13A continuous drain current. It is supplied in an 8-SOIC surface mount package.
✓ Total Stock: 214,233 pcs
$ Price Range: $2.81

TPC8063-H,LQ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
210,233 pcs
210233 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request 1520+ On Request On Request

TPC8063-H,LQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
FET Type
Failure Rate
Mounting Type
Operating Temperature
Power Dissipation (Max)
Technology

TPC8063-H,LQ Description

Short technical summary and product information.

The TPC8063-H,LQ from Toshiba is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 13A at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 11.6mOhm when driven with 6.5A and 10V gate-source voltage.

 

This MOSFET utilizes Metal Oxide Semiconductor technology and belongs to the U-MOSVII-H series. It has a gate threshold voltage (Vgs(th)) of 2.3V maximum at 200µA and a maximum gate-to-source voltage (Vgs) of ±20V. The component has a maximum power dissipation of 1W at ambient temperature and an operating temperature range of up to 150°C.

 

Packaged in an 8-SOIC case, the TPC8063-H,LQ is designed for surface mounting. Its input capacitance (Ciss) is 1350pF maximum at 10V drain-source voltage, and the gate charge (Qg) is 20nC maximum at 10V gate-source voltage. The RoHS status is listed as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH status as REACH Unaffected.

TPC8063-H,LQ Quick Information

Product Type: MOSFET
Series: U-MOSVII-H
Canonical Name: TPC8063-H,LQ N-Channel MOSFET
Subcategory: Single

TPC8063-H,LQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8063-H,LQ Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8063-H,LQ Features

  • 30V Drain to Source Voltage (Vdss).
  • 13A Continuous Drain Current (Id).
  • Low 11.6mOhm On-Resistance (Rds(on)).
  • N-Channel MOSFET (Metal Oxide) technology.
  • Surface Mount 8-SOIC package.

TPC8063-H,LQ Applications

  • Suitable for power switching circuits.
  • Used in general electronic applications.
  • Ideal for compact designs.
  • Component in discrete semiconductor circuits.

TPC8063-H,LQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum Drain to Source Voltage of the TPC8063-H,LQ?

The maximum Drain to Source Voltage (Vdss) for the TPC8063-H,LQ is 30V.

What is the package type for the TPC8063-H,LQ?

The TPC8063-H,LQ is supplied in an 8-SOIC (0.154", 3.90mm Width) package.

What is the maximum operating temperature for the TPC8063-H,LQ?

The maximum operating temperature for the TPC8063-H,LQ is 150°C.

What is the continuous drain current of this MOSFET?

The continuous drain current (Id) is 13A at a temperature of 25°C.

What is the On-Resistance (Rds(on)) of the TPC8063-H,LQ?

The maximum On-Resistance (Rds(on)) is 11.6mOhm, measured at Id = 6.5A and Vgs = 10V.

What is the Gate Threshold Voltage (Vgs(th))?

The maximum Gate Threshold Voltage (Vgs(th)) is 2.3V, measured at Id = 200µA.

What is the FET type of the TPC8063-H,LQ?

The TPC8063-H,LQ is an N-Channel FET.

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