| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210,233 pcs
|
210233 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 1520+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Failure Rate | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Technology |
The TPC8063-H,LQ from Toshiba is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of up to 13A at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 11.6mOhm when driven with 6.5A and 10V gate-source voltage.
This MOSFET utilizes Metal Oxide Semiconductor technology and belongs to the U-MOSVII-H series. It has a gate threshold voltage (Vgs(th)) of 2.3V maximum at 200µA and a maximum gate-to-source voltage (Vgs) of ±20V. The component has a maximum power dissipation of 1W at ambient temperature and an operating temperature range of up to 150°C.
Packaged in an 8-SOIC case, the TPC8063-H,LQ is designed for surface mounting. Its input capacitance (Ciss) is 1350pF maximum at 10V drain-source voltage, and the gate charge (Qg) is 20nC maximum at 10V gate-source voltage. The RoHS status is listed as RoHS3 Compliant, with an MSL of 1 Unlimited and REACH status as REACH Unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain to Source Voltage (Vdss) for the TPC8063-H,LQ is 30V.
The TPC8063-H,LQ is supplied in an 8-SOIC (0.154", 3.90mm Width) package.
The maximum operating temperature for the TPC8063-H,LQ is 150°C.
The continuous drain current (Id) is 13A at a temperature of 25°C.
The maximum On-Resistance (Rds(on)) is 11.6mOhm, measured at Id = 6.5A and Vgs = 10V.
The maximum Gate Threshold Voltage (Vgs(th)) is 2.3V, measured at Id = 200µA.
The TPC8063-H,LQ is an N-Channel FET.