| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| SVHC Present |
The Toshiba TPC8062-H is a high-performance N-Channel MOSFET designed for demanding applications. It boasts a breakdown voltage of 30V and a low minimum drain-source resistance of 7.3mΩ, ensuring efficient power handling.
This MOSFET is manufactured by Toshiba and is suitable for operation in environments with temperatures up to 150°C. Its specifications make it a reliable component for power switching and amplification circuits.
As a single N-Channel MOSFET, the TPC8062-H offers a robust solution for designers seeking dependable performance in their electronic systems. Its characteristics are well-suited for integration into various industrial and consumer electronics.
The minimum breakdown voltage for the TPC8062-H is 30V.
The minimum drain-source resistance is 7.3mΩ.
The TPC8062-H can operate at a maximum temperature of 150°C.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.