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28,578 pcs
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28578 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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The Toshiba TPC8057-H is a high-performance N-Channel MOSFET belonging to the U-MOS -H series. It is designed for applications requiring high efficiency, such as DC-DC converters found in notebook PCs and mobile handsets.
Key electrical specifications include a maximum Drain-Source Voltage (VDS) of 30V and a maximum Gate-Source Voltage (VGS) of ±20V. The device exhibits a low typical on-resistance (RDS(ON)) of 2.8mΩ when VGS is 4.5V, and a typical gate charge (QSW) of 14nC, enabling high-speed switching capabilities. The maximum leakage current (IDSS) is rated at 10A.
Packaged in a compact SOP8 surface-mount form factor, the TPC8057-H offers a small footprint suitable for space-constrained designs. Its features contribute to improved power efficiency and performance in demanding electronic systems.
The maximum Drain-Source Voltage (VDS) for the TPC8057-H is 30V.
The typical On-Resistance (RDS(ON)) of the TPC8057-H at VGS = 4.5V is 2.8mΩ.
The maximum continuous Drain Current (ID) for the TPC8057-H is 18A.
The TPC8057-H MOSFET is supplied in an SOP8 package.
The RoHS status of the TPC8057-H is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8057-H is 1 Unlimited.