| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TPC8055-H is a general-purpose small signal MOSFET featuring an N-channel configuration with a built-in diode. It operates in enhancement mode and is suitable for switching applications.
Key electrical specifications include a minimum breakdown voltage of 30V and a maximum drain current (ID) of 18A. The drain-source on-resistance is a low maximum of 0.0025 ohm, and the feedback capacitance (Crss) is 550 pF.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) FET technology and is constructed from silicon. It is housed in a THIN, SOP-8 small outline package with gull wing terminals, designed for surface mounting.
The Toshiba TPC8055-H is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected.
The minimum breakdown voltage is 30 V.
The maximum drain current (ID) is 18 A.
The maximum drain-source on-resistance is 0.0025 ohm.
It is an N-Channel MOSFET with a built-in diode, configured as single.
It is a THIN, 2-6J1S, SOP-8 small outline package designed for surface mounting.