| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,974 pcs
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28974 pcs | On Request | 1 | On Request | On Request | 19+ROHS | On Request | On Request |
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The Toshiba TPC8052-H is a Silicon N-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of 40V and a continuous drain current of 12A.
Key electrical characteristics include a minimum drain-source resistance of 13.3mΩ. The MOSFET is rated for a maximum operating temperature of 150°C, ensuring reliable performance in demanding environments.
With 8 terminals, the TPC8052-H is suitable for integration into power management circuits and other semiconductor applications. Its construction and specifications make it a versatile choice for engineers designing power-sensitive systems.
The breakdown voltage is 40V minimum.
The maximum operating temperature is 150°C.
The continuous drain current is 12A.
The minimum drain-source resistance is 13.3mΩ.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.