| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | 1646+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPC8048-H is a silicon N-Channel MOSFET suitable for various electronic applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 16A at 25°C.
Key electrical characteristics include a low on-resistance (RDS(on)) of 12 mOhm at VGS = 10V and 8A, and 16 mOhm at VGS = 4V and 8A. The typical gate-source threshold voltage (Vth) is 2.5V at 1mA.
This MOSFET is housed in a THIN, 8-PIN, FET package with a 2-6J1B case code. It is designed for surface mount applications, offering a compact solution for circuit designs. The maximum gate-source voltage is ±20V.
The maximum drain-source voltage (VDSS) is 60 V.
The maximum continuous drain current (ID) is 16 A at 25°C ambient temperature.
The maximum drain-source on-resistance is 12 mOhm at VGS = 10V and ID = 8A.
The typical gate threshold voltage is 2.5 V at ID = 1 mA.
The device is packaged in a 2-6J1B thin 8-pin surface mount package.
The maximum gate-source voltage is ±20 V.
It is an N-channel MOSFET.