| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,887 pcs
|
3887 pcs | On Request | 1 | On Request | On Request | 10+Q1 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC8040-H. is an N-channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current capability of 13A. The MOSFET exhibits a low drain-source on-resistance (Rds On) of 11.1 mOhms, contributing to efficient power handling.
This component is supplied in a SOIC-8 package and is delivered on a reel, suitable for automated assembly processes. Its specifications make it a suitable choice for power management and switching applications where performance and efficiency are critical.
Key electrical characteristics include a typical Rds On of 11.1 mOhms, enabling reduced conduction losses. The 30V breakdown voltage provides a good margin for many low-voltage applications. The continuous drain current rating of 13A indicates its capacity for handling moderate power loads.
The continuous drain current is 13 A.
The drain-source breakdown voltage is 30 V.
The typical Rds On is 11.1 mOhms.
It is supplied in a SOIC-8 package.
It is packaged on a reel.
The standard package quantity is 3000.