| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
28,578 pcs
|
28578 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba TPC8040-H is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 30V and can handle a continuous drain current of up to 13A.
Key electrical characteristics include a low drain-source on-resistance of 11.1 mOhms, which is crucial for efficient power switching and minimizing heat generation. The MOSFET is housed in a SOIC-8 package, suitable for surface-mount designs.
This component is supplied in a reel for automated assembly processes, with a factory pack quantity of 3000 units. Its specifications make it a suitable choice for power management circuits, switching applications, and general-purpose amplification where reliable performance is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 13 A.
The drain-source breakdown voltage is 30 V.
The drain-source on-resistance is 11.1 mOhms.
The TPC8040-H MOSFET is supplied in a SOIC-8 package.
The TPC8040-H MOSFET is packaged on a reel.
The factory pack quantity is 3000 units.