DistyParts Icon
TPC8033-H. The Toshiba TPC8033-H is a Silicon N-Channel MOS Type Field Effect Transistor. It features a breakdown voltage of 30V and a maximum power dissipation of 1.9W.
Mfr Part #:

TPC8033-H.

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8033-H is a Silicon N-Channel MOS Type Field Effect Transistor. It features a breakdown voltage of 30V and a maximum power dissipation of 1.9W.
✓ Total Stock: 21,950 pcs

TPC8033-H. Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
21,950 pcs
On Request
21950 pcs On Request 1 On Request On Request 09+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8033-H. Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
View Similar Products (0)

TPC8033-H. Description

Short technical summary and product information.

The TPC8033-H from Toshiba is a Silicon N-Channel MOS Type Field Effect Transistor. This component is designed for electronic applications requiring reliable switching and amplification.

 

Key electrical specifications include a minimum drain-source resistance of 8.6 mOhm and a breakdown voltage of 30V. The device can handle a maximum power dissipation of 1.9W and operates up to a maximum temperature of 150°C.

 

With 8 terminals, the TPC8033-H is suitable for various circuit designs. Its construction as a field-effect transistor makes it a versatile component for power management and signal processing tasks.

TPC8033-H. Quick Information

Product Type: Transistor
Canonical Name: TPC8033-H Silicon N-Channel MOS Type Field Effect Transistor
Subcategory: Field Effect Transistor

TPC8033-H. Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8033-H. Features

  • Silicon N-Channel MOS Type Field Effect Transistor.
  • 30V minimum breakdown voltage.
  • 8.6 mOhm minimum drain-source resistance.
  • 1.9W maximum power dissipation.
  • 150°C maximum operating temperature.

TPC8033-H. Applications

  • Used in power management circuits.
  • Suitable for DC-DC converter designs.
  • Ideal for load switching applications.
  • Common in battery protection systems.
  • Used in motor control circuits.

TPC8033-H. FAQs

6 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPC8033-H?

The breakdown voltage is 30V minimum.

What is the maximum operating temperature for the TPC8033-H?

The maximum operating temperature is 150°C.

What is the minimum drain-source resistance?

The minimum drain-source resistance is 8.6 mOhm.

What is the maximum power dissipation?

The maximum power dissipation is 1.9W.

What is the RoHS status?

RoHS3 Compliant

What is the Moisture Sensitivity Level (MSL)?

1 Unlimited

Home

Categories