| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25,868 pcs
|
25868 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The TPC8029-H is a Single N-Channel MOSFET manufactured by VBsemi, supplied in a SOP8 package. This component utilizes Trench Technology and is designed for applications requiring a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 18A.
Key electrical characteristics include a gate-source voltage (Vgs) of ±20V and a threshold voltage (Vth) of 1.7V. The on-resistance (Rds(on)) is specified at 5mΩ at a gate-source voltage of 4.5V and 4mΩ at 10V, indicating efficient switching performance.
This MOSFET is suitable for various power management and switching applications where reliable performance and specific voltage and current ratings are essential. Its SOP8 package is common for surface-mount designs, facilitating integration into compact electronic circuits.
The Vds of the TPC8029-H MOSFET is 30V.
The continuous drain current (Id) for the TPC8029-H is 18A.
The on-resistance (Rds(on)) of the TPC8029-H at 4.5V gate drive is 5mΩ.
The TPC8029-H MOSFET is supplied in a SOP8 package.
The TPC8029-H is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the TPC8029-H is 1 Unlimited.