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TPC8029 The Toshiba TPC8029 is an N-Channel MOSFET designed for portable equipment and lithium-ion battery applications. It features low drain-source on-resistance and high forward transfer admittance.
Mfr Part #:

TPC8029

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8029 is an N-Channel MOSFET designed for portable equipment and lithium-ion battery applications. It features low drain-source on-resistance and high forward transfer admittance.
✓ Total Stock: 12,800 pcs

TPC8029 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
10,000 pcs
On Request
10000 pcs On Request 1 On Request On Request 14+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,800 pcs
On Request
2800 pcs On Request 1 On Request On Request 07+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TPC8029 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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TPC8029 Description

Short technical summary and product information.

The Toshiba TPC8029 is a power field-effect transistor featuring an N-Channel, Metal-oxide Semiconductor FET design. It is part of the U-MOS IV technology series, offering enhanced performance for applications such as lithium-ion batteries and portable electronic devices.

 

Key electrical characteristics include a low drain-source ON resistance of 2.9 mΩ (typ.) at 18A drain current, and a high forward transfer admittance of 40 S (typ.). It also exhibits a low leakage current of 10 μA (max) at 30V drain-source voltage.

 

The TPC8029 is housed in a small and thin TPC8 package, suitable for surface mounting. Its design makes it ideal for space-constrained applications within portable equipment and notebook PCs.

TPC8029 Quick Information

Product Type: N-Channel MOSFET
Series: U-MOS IV
Canonical Name: Toshiba TPC8029 N-Channel MOSFET
Subcategory: N-Channel

TPC8029 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8029 Features

  • N-Channel Metal-oxide Semiconductor FET.
  • Low drain-source ON resistance.
  • High forward transfer admittance.
  • Suitable for battery applications.
  • Small footprint package.

TPC8029 Applications

  • Ideal for lithium-ion battery applications.
  • Used in portable equipment.
  • Suitable for notebook PC applications.

TPC8029 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source ON resistance of the TPC8029?

The typical drain-source ON resistance is 2.9 mΩ at a drain current of 9 A and gate-source voltage of 10 V.

What is the typical forward transconductance of the TPC8029?

The typical forward transconductance (|Yfs|) is 40 S.

What is the maximum drain current for the TPC8029?

The maximum drain current (ID) is 18 A.

What is the maximum leakage current for the TPC8029?

The maximum leakage current (IDSS) is 10 μA at 30 V drain-source voltage.

What type of channel does the TPC8029 have?

The TPC8029 has an N-Channel.

What technology is used in the TPC8029 MOSFET?

The TPC8029 utilizes U-MOS IV technology.

What package is the TPC8029 available in?

The TPC8029 is available in the TPC8 package.

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