| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40,000 pcs
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40000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name |
The Toshiba TPC8027-H is a Silicon N-Channel MOSFET manufactured by Toshiba. This component is designed for electronic switching applications.
Key electrical characteristics include a Drain-Source Voltage rating of 30V. The MOSFET is manufactured using silicon technology, typical for modern semiconductor devices.
Further details regarding package type, operating temperature, and specific application suitability would typically be found in the product's datasheet. However, based on available information, it is classified under Transistors - FETs, MOSFETs - Single.
This component is identified by part number TPC8027-H and is produced by Toshiba. Its specifications make it a candidate for integration into various circuit designs requiring N-Channel MOSFET functionality.
The Drain-Source Voltage is 30V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.