TPC8021-H(TE12LQ,M The Toshiba TPC8021-H is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous current rating. It features a low on-resistance and is available in a surface mount 8-SOP package.
Mfr Part #:

TPC8021-H(TE12LQ,M

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPC8021-H is an N-Channel MOSFET with a 30V drain-source voltage and 11A continuous current rating. It features a low on-resistance and is available in a surface mount 8-SOP package.
✓ Total Stock: 7,000 pcs
$ Price Range: $2.56

TPC8021-H(TE12LQ,M Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,000 pcs
7000 pcs On Request 1 On Request On Request 12+ On Request On Request

TPC8021-H(TE12LQ,M Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TPC8021-H(TE12LQ,M Description

Short technical summary and product information.

The Toshiba TPC8021-H is a silicon N-channel MOSFET designed for high-efficiency DC-DC converter applications, notebook PCs, and portable equipment. It offers a small footprint due to its small and thin package.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 30V, a continuous drain current (Id) of 11A at 25°C ambient temperature, and a maximum power dissipation of 1W at 25°C ambient temperature. The drain-source on-resistance (Rds(on)) is a low 17mΩ at 5.5A and 10V gate-source voltage. The gate charge (Qg) is 11nC typical at 10V gate-source voltage, and the input capacitance (Ciss) is 640pF typical at 10V drain-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 2.3V at 1mA gate-source current.

 

This MOSFET operates at a maximum channel temperature of 150°C. It is housed in an 8-SOP package with surface mount mounting type, measuring 5.5x6.0mm. The drive voltage ranges from 4.5V to 10V for optimal Rds On performance.

TPC8021-H(TE12LQ,M Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TPC8021-H N-Channel MOSFET
Subcategory: N-Channel

TPC8021-H(TE12LQ,M Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8021-H(TE12LQ,M Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPC8021-H(TE12LQ,M Features

  • N-Channel MOSFET for high-efficiency applications.
  • 30V drain-source voltage rating.
  • Low 17mOhm Rds(on) at 5.5A, 10V.
  • Surface mount 8-SOP package.
  • Suitable for DC-DC converters and portable equipment.

TPC8021-H(TE12LQ,M Applications

  • Ideal for DC-DC converters.
  • Used in notebook PC applications.
  • Suitable for portable equipment.
  • High-speed switching applications.

TPC8021-H(TE12LQ,M FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TPC8021-H(TE12LQ,M?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current is 11A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 17mOhm at 5.5A and 10V gate drive.

What package does the TPC8021-H(TE12LQ,M come in?

It comes in an 8-SOIC (0.173", 4.40mm Width) surface-mount package, also known as 8-SOP (5.5x6.0).

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 2.3V at 1mA drain current.

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