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TPC8020-H(TE12LQM) The VBsemi TPC8020-H(TE12LQM) is an N-Channel MOSFET designed for various applications. It features a 30V breakdown voltage and a 13A continuous drain current.
Mfr Part #:

TPC8020-H(TE12LQM)

Available from 1 distributors
Mfr Name: VBsemi
VBsemi
The VBsemi TPC8020-H(TE12LQM) is an N-Channel MOSFET designed for various applications. It features a 30V breakdown voltage and a 13A continuous drain current.
✓ Total Stock: 27,585 pcs

TPC8020-H(TE12LQM) Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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27,585 pcs
On Request
27585 pcs On Request 1 On Request On Request 19+ On Request On Request
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TPC8020-H(TE12LQM) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TPC8020-H(TE12LQM) Description

Short technical summary and product information.

The TPC8020-H(TE12LQM) from VBsemi is a single N-Channel MOSFET. It is designed with a drain-source breakdown voltage of 30V and can handle a continuous drain current of 13A.

 

This MOSFET exhibits low on-resistance values, with a typical 8mΩ at 10V gate-source voltage and 11mΩ at 4.5V gate-source voltage. The gate-source threshold voltage is typically 1.7V, and the maximum gate-source voltage is ±20V.

 

The component is encapsulated in a SOP8 package, suitable for surface-mount applications. Its specifications make it a candidate for power switching and amplification circuits where efficiency and performance are critical.

TPC8020-H(TE12LQM) Quick Information

Product Type: MOSFET
Canonical Name: TPC8020-H(TE12LQM) N-Channel MOSFET
Subcategory: Single

TPC8020-H(TE12LQM) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPC8020-H(TE12LQM) Features

  • N-Channel MOSFET with 30V breakdown voltage.
  • Continuous drain current of 13A.
  • Low on-resistance: 8mΩ @ 10V Vgs.
  • SOP8 package for surface mounting.
  • Typical gate-source threshold of 1.7V.

TPC8020-H(TE12LQM) Applications

  • Used in DC-DC converter power stages.
  • Ideal for load swiching applications.
  • Suitable for batery protection circuits.
  • Aplied in low-volage power distribution systems.
  • Power swich in consumer electroncs.

TPC8020-H(TE12LQM) FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of TPC8020-H(TE12LQM)?

The drain-source breakdown voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 13A.

What is the on-resistance at 10V gate voltage?

The typical on-resistance is 8mΩ at VGS=10V.

What is the gate threshold voltage?

The typical gate-source threshold voltage is 1.7V.

What package is this MOSFET available in?

This MOSFET is in the SOP8 package.

What is the maximum gate-source voltage rating?

The maximum gate-source voltage is ±20V.

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